Atomic Structure and Electrical Properties of Thermally Grown SiO2/SiC Interfaces

Atomic Structure and Properties of Epitaxial Thin-film Semiconductor Interfaces

Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides...

Formation and electrical properties of Hf Si2 grown thermally from evaporated Hf and Si films

2 MeV He+ backscattering spectrometry and x-ray diffraction have been used to study HfSi2 formed by thermal annealing of a Hf Si film on evaporated Si (Si•) at temperatures between 575 and 650 ·c. A laterally uniform layer of Hf Si2 forms and its thickness is proportional to the square root of time at a fixed temperature. The activation energy of this reaction is found to be 3.5 ± 0.3 eV. This ...

some properties of fuzzy hilbert spaces and norm of operators

in this thesis, at first we investigate the bounded inverse theorem on fuzzy normed linear spaces and study the set of all compact operators on these spaces. then we introduce the notions of fuzzy boundedness and investigate a new norm operators and the relationship between continuity and boundedness. and, we show that the space of all fuzzy bounded operators is complete. finally, we define...

Effects of thermally-induced changes of Cu grains on domain structure and electrical performance of CVD-grown graphene.

During the chemical vapor deposition (CVD) growth of graphene on Cu foils, evaporation of Cu and changes in the dimensions of Cu grains in directions both parallel and perpendicular to the foils are induced by thermal effects. Such changes in the Cu foil could subsequently change the shape and distribution of individual graphene domains grown on the foil surface, and thus influence the domain s...

Title Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)